![]() TOP Key Industry Players of the Semiconductor Intellectual Property (IP) Market The global Semiconductor Intellectual Property (IP) market size was valued at USD 4680.23 million in 2022 and is expected to expand at a CAGR of 7.66% during the forecast period, reaching USD 7289.04 million by 2028. The report goes beyond mere data and statistics it also acts as a strategic navigation tool and guides you to make informed decisions in this dynamic market. Further, this report explores key trends, market segmentations by Types and Applications, the driving components, regional analysis, and the overall scope of the report. This report aims to provide valuable insights This report aims to provide valuable insights by delving into comprehensive research and analysis. In today's world, understanding the dynamics of the Semiconductor Intellectual Property (IP) Market has become imperative for businesses and marketers. Benhaliliba, Micro Nanostruct.The recently published Semiconductor Intellectual Property (IP) Market Report 2023 spanning across 110 pagesand offers a comprehensive overview of its present condition, size, volume and market share. Ng, Physics of Semiconductor Devices: Third Edition (Wiley, London, 2006) Based on the obtained data, it can be concluded that the electrical properties of ZnO diode structures vary with the amount of Cd dopant, and these diodes can be utilized in optoelectronic applications as photodiodes. Furthermore, the series resistance ( R s) values of undoped and Cd-doped ZnO diodes were calculated using the Norde method, revealing values in the order of Ω. Additionally, I– t measurements were evaluated to investigate the photoresponse characteristics of the produced diodes, demonstrating an increase in current with higher illumination intensities. The results revealed an increase in reverse bias photocurrent with the increment of illumination intensity, indicating the light sensitivity of the samples. Utilizing the thermionic emission theory, the ideality factor ( n), barrier height ( Φ b), and saturation current ( I 0) values of the samples were calculated. ![]() ![]() The electrical properties of the samples were investigated through current–voltage ( I–V) and current–time ( I–t) measurements under different illumination intensities and in the dark. Moreover, p– n junction diode structures were created using undoped Al/ZnO/ p-Si/Al and %1, %3, %5 Cd-doped Al/Cd:ZnO/ p-Si/Al configurations. It was determined that the thin films exhibited a hexagonal wurtzite structure with varying surface morphologies. Surface structural analysis of the fabricated samples was performed using SEM (scanning electron microscopy) and XRD (X-ray diffraction). The structural properties of both undoped and Cd-doped ZnO films were examined. In this study, undoped and (1%, 3%, 5%) Cd-doped ZnO thin films were produced on p-type Si substrates using the SILAR (successive ionic layer adsorption and reaction) technique at room temperature.
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